SYNTHESIS METHOD OF CU(IN,GA)SE2 NANOROD OR NANOWIRE AND MATERIALS INCLUDING THE SAME
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United States of America Patent
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Issued Date -
Jul 17, 2014
app pub date -
Sep 13, 2013
filing date -
Jan 16, 2013
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Abandoned
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Abstract
A method of fabricating CIGS nanorod or nanowire according to one exemplary embodiment of the present disclosure comprises a deposition preparation step of placing a raw material including copper, indium, gallium and selenium and a substrate, and a deposition step of growing CIGS nanorod or nanowire on the substrate by maintaining an internal temperature of a reactor, in which carrier gas flows at a constant flow rate, at a temperature in the range of 850 to 1000° C. According to the method, Cu(In,Ga)Se2 nanorod or nanowire as a direct transition type semiconductor material having substantially uniform composition, high crystallinity and high light absorption ratio can be fabricated.
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