IMAGE SENSOR WITH LAYERS OF DIRECT BAND GAP SEMICONDUCTORS HAVING DIFFERENT BAND GAP ENERGIES
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United States of America Patent
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Issued Date -
Jul 17, 2014
app pub date -
Jan 30, 2013
filing date -
Jan 15, 2013
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Abstract
Embodiments of an exemplary image sensor structure of the present disclosure contains at least two different layers of band gap semiconductors, where each upper layer of the different layers has a different band gap than a lower layer. For such an image sensor structure, the upper layer has a greater band gap than any layer positioned below the upper layer including the lower layer.
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