SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
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United States of America Patent
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app pub date -
Mar 18, 2014
filing date -
Apr 27, 2007
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Abstract
A semiconductor device may include an n-MOS transistor, and a p-MOS transistor. The p-MOS transistor may include, but is not limited to, a gate insulating film and a gate electrode. The gate electrode may have an adjacent portion that is adjacent to the gate insulating film. The adjacent portion may include a polysilicon that contains an n-type dopant and a p-type dopant.
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