Method, system and device for phase change memory with shunt

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United States of America Patent

PATENT NO 8988926
APP PUB NO 20140198565A1
SERIAL NO

13739387

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Abstract

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Embodiments disclosed herein may relate to forming a storage component comprising a phase change material and a shunt relative to amorphous portions of the phase change material.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ghetti, Andrea Concorezzo, IT 14 174
Pellizzer, Fabio Cornate d'Adda, IT 313 3162
Tortorelli, Innocenzo Cernusco Sul Naviglio, IT 151 1004

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