HIGH ASPECT RATIO PATTERNING USING NEAR-FIELD OPTICAL LITHOGRAPHY WITH TOP SURFACE IMAGING
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United States of America Patent
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Issued Date -
Jul 24, 2014
app pub date -
Jan 24, 2013
filing date -
Jan 24, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Rolling mask lithography may be performed to expose selected portions of a radiation sensitive layer to a radiation pattern that leaves selected portions of a top surface of the radiation sensitive layer resistant to development by a developer and non-selected portions susceptible to development by the developer. A structure of the selected portions is then rendered resistant to an etch process. The radiation sensitive layer is then flood exposed to a second radiation that leaves the radiation sensitive layer resistant to development by the developer. The radiation sensitive layer is then selectively etched using the etch-resistant selected portions as an etch mask.
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Cited Art Landscape
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