Semiconductor light emitting device
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United States of America Patent
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Jan 6, 2015
Grant Date -
Jul 24, 2014
app pub date -
Mar 20, 2013
filing date -
Jan 21, 2013
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer; a p-side electrode; an n-side electrode; and a fluorescent body layer. The p-side electrode is provided on a second surface side of the semiconductor layer. The n-side electrode is provided on the second surface side of the semiconductor layer. The fluorescent body layer is provided on a first surface side of the semiconductor layer and contains a plurality of fluorescent bodies configured to be excited by emission light of the light emitting layer and emit light of a different wavelength from the emission light and a bonding material integrating the plurality of fluorescent bodies and configured to transmit the emission light. An average spacing between adjacent ones of the fluorescent bodies is narrower than a peak wavelength of emission light of the light emitting layer.
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