Solid state imaging device and imaging apparatus
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United States of America Patent
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Oct 14, 2014
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app pub date -
Mar 26, 2014
filing date -
Sep 27, 2011
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Abstract
A solid-state imaging device has, in a semiconductor substrate, plural PDs arranged two-dimensionally and signal reading circuits which are formed as MOS transistors and read out signals corresponding to charges generated in the respective PDs. Microlenses for focusing light beams are formed over the respective PDs. An interlayer insulating film in which interconnections are buried is formed as an insulating layer between the semiconductor substrate and the microlenses. Closed-wall-shaped structures are formed in the interlayer insulating film so as to surround parts of focusing optical paths of the microlenses, respectively. The structures are made of a nonconductive material that is different in refractive index from a material of what is formed around them.
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