FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES

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United States of America Patent

SERIAL NO

14223351

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Abstract

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In accordance with an embodiment a structure can include a monolithically integrated trench field-effect transistor (FET) and Schottky diode. The structure can include a first gate trench extending into a semiconductor region, a second gate trench extending into the semiconductor region, and a source region flanking a side of the first gate trench. The source region can have a substantially triangular shape, and a contact opening extending into the semiconductor region between the first gate trench and the second gate trench. The structure can include a conductor layer disposed in the contact opening to electrically contact the source region along at least a portion of a slanted sidewall of the source region, and the semiconductor region along a bottom portion of the contact opening. The conductor layer can form a Schottky contact with the semiconductor region.

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Patent Owner(s)

Patent OwnerAddress
FAIRCHILD SEMICONDUCTOR CORPORATIONSAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Calafut, Daniel San Jose, US 55 1209
Herrick, Robert Lehi, US 22 1004
Kocon, Christopher Boguslaw Mountain Top, US 80 1331
Losee, Becky Orem, US 21 960
Probst, Dean West Jordan, US 25 578
Rexer, Christopher Lawrence Mountaintop, US 13 262
Sapp, Steven Felton, US 48 1536
Thorup, Paul West Jordan, US 21 410
Yilmaz, Hamza Saratoga, US 268 4187

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