Drive circuit for a gated semiconductor switching device and method for driving a gated semiconductor switching device

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United States of America Patent

PATENT NO 9344063
APP PUB NO 20140203849A1
SERIAL NO

14238697

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Abstract

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Drive circuit and method for a gated semiconductor switching device A drive circuit and method for a gated semiconductor switching device (10) comprising providing coupling such as a mutual inductance between a gate drive circuit (21) for the device and a drain to source current supply circuit (22) for the device in order to change a gate voltage provided by the gate drive circuit dependent on a rate of change of a current in the drain to source current supply circuit. The change in gate voltage has a magnitude and phase arranged to increase or decrease a switching speed of the gated semiconductor switching device.

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Patent Owner(s)

  • TELEDYNE E2V (UK) LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Richardson, Robert Chelmsford, GB 55 371

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