Semiconductor device and method for manufacturing same and semiconductor substrate

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United States of America Patent

PATENT NO 9373686
APP PUB NO 20140209927A1
SERIAL NO

14167295

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Abstract

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According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type made of silicon carbide; and a second semiconductor layer of a second conductivity type made of silicon carbide, placed in junction with the first semiconductor layer, and containing an electrically inactive element.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 105-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nishio, Johji Tokyo, JP 90 1263
Ota, Chiharu Kanagawa-ken, JP 55 272
Shimizu, Tatsuo Tokyo, JP 285 2222
Shinohe, Takashi Kanagawa-ken, JP 168 1537

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