Convex shaped thin-film transistor device having elongated channel over insulating layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 5, 2016
Issued Date -
N/A
app pub date -
Mar 17, 2014
filing date -
Dec 27, 2006
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention provides a semiconductor device that has a shorter distance between the bit lines and easily achieves higher storage capacity and density. The semiconductor device includes: first bit lines formed on a substrate; an insulating layer that is provided between the first bit lines and in a groove in the substrate, and has a higher upper face than the first bit lines; channel layers that are provided on both side faces of the insulating layer, and are coupled to the respective first bit lines; and charge storage layers that are provided on the opposite side faces of the channel layers from the side faces on which the insulating layers are formed.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully