Low distortion MOS attenuator

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United States of America Patent

PATENT NO 8878588
SERIAL NO

14242084

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Abstract

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An attenuation circuit uses a voltage controlled variable resistance transistor as a signal attenuator for receivers operating in the zero Hz to about 30 MHz range. The transistor functions in the linear region to linearize the transistor resistance characteristics used for signal attenuation. In an exemplary application, the attenuation circuit is used as an RF attenuator for AM radio broadcast receivers and amplifiers with automatic gain control. Multiple attenuation circuits can be coupled in parallel, each attenuation circuit having a different sized variable resistance transistor, to form sequentially activated stages that increase the range of attenuation while minimizing distortion.

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Patent Owner(s)

  • MAXIM INTEGRATED PRODUCTS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Birkeland, Joel D North Plains, US 8 64
Meyer, Robert G Berkeley, US 17 106

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