System for self-aligned contacts
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United States of America Patent
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Dec 1, 2015
Grant Date -
Jul 31, 2014
app pub date -
Feb 24, 2014
filing date -
Aug 2, 2011
priority date (Note) -
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Abstract
A system for forming self-aligned contacts includes electroplating a first metal contact onto a Group III-V semiconductor substrate, the first metal contact having a greater height than width and having a straight sidewall profile, etching back the semiconductor substrate down to a base layer to expose an emitter semiconductor layer under the first metal contact, conformally depositing a dielectric layer on a vertical side of the first metal contact, a vertical side of the emitter semiconductor layer and on the base layer, anisotropically etching the dielectric layer off of the semiconductor substrate to form a dielectric sidewall spacer on the vertical side of the first metal contact and providing a second metal contact immediately adjacent the dielectric sidewall spacer.
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