PROCESSING SYSTEM FOR COMBINED METAL DEPOSITION AND REFLOW ANNEAL FOR FORMING INTERCONNECT STRUCTURES
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United States of America Patent
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app pub date -
Sep 10, 2013
filing date -
Feb 5, 2013
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Abstract
An interconnect conductive metal used in forming an interconnect structure can be formed using a method in which deposition of a metal liner and a reflow anneal are performed in a same multi-chambered processing system without exposing the structure to air between the steps of deposition and reflow annealing. In the disclosure, an interconnect dielectric material including an opening is placed within the multi-chambered processing system and then the interconnect dielectric material is transferred, under vacuum, to a deposition chamber in which the metal liner is deposited. The interconnect dielectric material including the metal liner is then transferred, under the same vacuum, to an annealing chamber in which a reflow anneal is performed.
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