Memory cells, methods of forming memory cells and methods of forming memory arrays
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United States of America Patent
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Oct 20, 2015
Grant Date -
Aug 7, 2014
app pub date -
Apr 11, 2014
filing date -
Apr 11, 2011
priority date (Note) -
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Abstract
Some embodiments include memory cells which have multiple programmable material structures between a pair of electrodes. One of the programmable material structures has a first edge, and another of the programmable material structures has a second edge that contacts the first edge. Some embodiments include methods of forming an array of memory cells. First programmable material segments are formed over bottom electrodes. The first programmable material segments extend along a first axis. Lines of second programmable material are formed over the first programmable material segments, and are formed to extend along a second axis that intersects the first axis. The second programmable material lines have lower surfaces that contact upper surfaces of the first programmable material segments. Top electrode lines are formed over the second programmable material lines.
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