Large array of upward pointing p-i-n diodes having large and uniform current

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United States of America Patent

PATENT NO 9025372
APP PUB NO 20140217354A1
SERIAL NO

14249628

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Abstract

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A monolithic three-dimensional memory array is provided that includes a first memory level and a second memory level disposed above or below the first memory level. The first memory level includes a plurality of vertically oriented p-i-n diodes that each include a bottom heavily doped p type region. The second memory level includes a plurality of vertically oriented p-i-n diodes that each include a bottom heavily doped n type region. Numerous other aspects are also provided.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Herner, Scott Brad San Jose, US 134 2562

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