Recessed access devices and gate electrodes

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United States of America Patent

PATENT NO 9502516
APP PUB NO 20140217498A1
SERIAL NO

14247968

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Abstract

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Recessed access transistor devices used with semiconductor devices may include gate electrodes having materials with multiple work functions, materials that are electrically isolated from each other and supplied with two or more voltage supplies, or materials that create a diode junction within the gate electrode.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gibbons, Jasper S Meridian, US 8 57
Parekh, Kunal R Boise, US 289 2968
Smith, Casey Salt Lake City, US 12 139
Young, Darren V Meridian, US 4 74

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