Semiconductor memory device and method for manufacturing same

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United States of America Patent

PATENT NO 9130020
APP PUB NO 20140217598A1
SERIAL NO

13948486

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Abstract

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According to one embodiment, a semiconductor memory device includes a plurality of interconnects of an nth layer, a plurality of interconnects of a (n+1)th layer, a plurality of stacked films of the nth layer, each of the plurality of stacked films of the nth layer including a memory element, an inter-layer insulating film of the nth layer, a plurality of interconnects of a (n+2)th layer, a plurality of stacked films of the (n+1)th layer, each of the plurality of stacked films of the (n+1)th layer including a memory element, and an inter-layer insulating film of the (n+1)th layer. The inter-layer insulating film of the (n+1)th layer is provided also at a side surface of an end portion in the first direction of the interconnects of the nth layer.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Noda, Kotaro Mie-ken, JP 53 96

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