Semiconductor Memory Device with Hierarchical Bitlines

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United States of America Patent

APP PUB NO 20140219008A1
SERIAL NO

14245905

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Abstract

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A dynamic random access memory (DRAM) device has a hierarchical bitline structure with local bitlines and global bitlines formed on different metal layers. The local bitlines are separated into a plurality of local bitline sections, and bitline isolation switches are configured to connect or disconnect the local bitline sections to or from the global bitlines. As a result, the local bitlines with higher per-length capacitance can be made shorter, since the global bitline with lower per-length capacitance is used to route the signal from the cell capacitances of the memory cells to the remote sense amplifiers.

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Patent Owner(s)

Patent OwnerAddress
RAMBUS INC1050 ENTERPRISE WAY SUITE 700 SUNNYVALE CA 94089

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Vogelsang, Thomas Mountain View, US 163 1479

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