Method of producing CIGS film, and method of producing CIGS solar cell by using same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8962379
APP PUB NO 20140220729A1
SERIAL NO

14241007

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Abstract

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A CIGS film production method is provided which ensures that a CIGS film having a higher conversion efficiency can be produced at lower costs at higher reproducibility even for production of a large-area device. A CIGS solar cell production method is also provided for producing a CIGS solar cell including the CIGS film. The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium in a solid phase in this order over a substrate; and a heating step of heating a stacked structure including the layer (A) and the layer (B) to melt a compound of copper and selenium of the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A) to permit crystal growth to provide a CIGS film.

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Patent Owner(s)

  • NITTO DENKO CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hosokawa, Kazuhito Ibaraki, JP 47 248
Minemoto, Takashi Kusatsu, JP 6 26
Morita, Shigenori Ibaraki, JP 33 324
Nishii, Hiroto Ibaraki, JP 10 19
Teraji, Seiki Ibaraki, JP 16 19

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