GAS DISTRIBUTION MANIFOLD SYSTEM FOR CHEMICAL VAPOR DEPOSITION REACTORS AND METHOD OF USE
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United States of America Patent
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Aug 14, 2014
app pub date -
Feb 14, 2013
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Feb 14, 2013
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Abstract
A gas distribution manifold for a chemical vapor deposition reactor includes a first gas distribution zone including a central gas port located in a central portion of the manifold. The manifold also includes a second gas distribution zone including at least two intermediate ports adjacent the central gas port. The manifold further includes a third gas distribution zone including at least two outer ports, each one of the outer ports spaced from the central gas port by one of the intermediate ports. The gas distribution manifold includes a fourth gas distribution zone comprising at least two edge ports, each edge port being spaced from the central outlet port by at least one of the intermediate and outer ports.
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