Interdigitated back contact heterojunction photovoltaic device

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United States of America Patent

PATENT NO 9640699
SERIAL NO

13763219

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Abstract

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A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having a same dopant conductivity as the substrate. Methods are also disclosed.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Tze-Chiang Yorktown Heights, US 102 1417
Hekmatshoartabari, Bahman White Plains, US 389 1813
Sadana, Devendra K Pleasantville, US 897 9950
Shahrjerdi, Davood White Plains, US 247 4205

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