Importance

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Abstract

A light-emitting device having an n-type semiconductor layer having a plurality of pits with planar regions between the pits, the pits being characterized by sidewalk that intersect the planar regions is disclosed. A plurality of alternating sub-layers of materials having different bandgaps is deposited on the n-type semiconductor layer. The sub-layers have thicknesses such that the sub-layers form an active layer in the planar regions between the pits and a super lattice on the sidewalls of the pits. A p-type semiconductor layer is deposited on the plurality of alternating sub-layers. One of the sub-layers includes an electron blocking layer. The electron blocking layer is characterized by a first thickness in the substantially planar regions and a second thickness in areas adjacent to the sidewalls of the pits, the second thickness being less than the first thickness.

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First Claim