Flash memory cells having trenched storage elements

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United States of America Patent

PATENT NO 9917211
SERIAL NO

14254237

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Abstract

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An embodiment of the present invention is directed to a memory cell. The memory cell includes a first trench formed in a semiconductor substrate and a second trench formed in said semiconductor substrate adjacent to said first trench. The first trench and the second trench each define a first side wall and a second sidewall respectively. The memory cell further includes a first storage element formed on the first sidewall of the first trench and a second storage element formed on the second sidewall of the second trench.

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Patent Owner(s)

  • CYPRESS SEMICONDUCTOR CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chi Saratoga, US 123 2245
Kim, Unsoon San Jose, US 59 516
Zheng, Wei Santa Clara, US 323 2395

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