Methods for forming an interdigitated back contact heterojunction photovoltaic device with a floating junction front surface field

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United States of America Patent

PATENT NO 9985167
SERIAL NO

13966781

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Abstract

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A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having an opposite dopant conductivity from that of the substrate. Methods are also disclosed.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Tze-Chiang Yorktown Heights, US 102 1417
Hekmatshoartabari, Bahman White Plains, US 389 1809
Sadana, Devendra K Pleasantville, US 897 9915
Shahrjerdi, Davood White Plains, US 247 4191

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