Three-dimensional structured memory devices

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United States of America Patent

PATENT NO 9190416
SERIAL NO

14263322

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Abstract

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In various embodiments, a three-dimensional structured nonvolatile semiconductor memory devices and methods for manufacturing the devices are disclosed. One such device includes an n-type doped region at a source/drain region; a p-type doped region at the source/drain region; and a diffusion barrier material between the n-type doped region and the p-type doped region. The n-type doped region is substantially isolated from the p-type doped region. Other embodiments are also disclosed.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bin, Jin Ho Seoul, KR 31 146
Kwon, II Young Seoul, KR 5 37
Lee, Ki Hong Suwon-si, KR 264 2668
Pyi, Seung Ho Yongin-si, KR 90 2302

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