SEMICONDUCTOR DEVICE HAVING GATE TRENCH AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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app pub date -
Apr 22, 2014
filing date -
Jun 1, 2011
priority date (Note) -
Abandoned
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Abstract
Disclosed herein is a semiconductor device that includes a trench formed across active regions and the element isolation regions. A conductive film is formed at a lower portion of the trench, and a cap insulating film is formed at an upper portion of the trench. The cap insulating film has substantially the same planer shape as that of the conductive film.
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