C PARTICLE DISPERSED FE-PT-BASED SPUTTERING TARGET
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United States of America Patent
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Issued Date -
Aug 21, 2014
app pub date -
Dec 18, 2012
filing date -
Dec 22, 2011
priority date (Note) -
Abandoned
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Abstract
Provided is a sputtering target for a magnetic recording film, the sputtering target comprising 5 mol % or more and 60 mol % or less of Pt, 0.1 mol % or more and 40 mol % or less of C, 0.05 mol % or more and 20 mol % or less of titanium oxide, and the remainder being Fe. It is an object of the present invention to provide a high-density sputtering target that can produce a granular magnetic thin film without using any high-cost co-sputtering apparatuses and can also reduce the amount of particles generated during sputtering.
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