CAPACITORS HAVING DIELECTRIC LAYERS WITH DIFFERENT BAND GAPS AND SEMICONDUCTOR DEVICES USING THE SAME
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United States of America Patent
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Issued Date -
Aug 21, 2014
app pub date -
Nov 4, 2013
filing date -
Feb 18, 2013
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Abandoned
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Abstract
A capacitor of a memory device includes dielectric layers with different energy band gaps. The capacitor may include, for example, a first electrode and a first dielectric layer on the first electrode. The capacitor may further include a second dielectric layer on the first dielectric layer. The first and second dielectric layers may include the same dielectric material with different concentration of an impurity therein. A second electrode is disposed on the second dielectric layer.
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