LITHOGRAPHY WITH REDUCED FEATURE PITCH USING ROTATING MASK TECHNIQUES
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United States of America Patent
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Issued Date -
Aug 21, 2014
app pub date -
Apr 24, 2014
filing date -
Oct 24, 2011
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Embodiments of the present invention are directed to techniques for obtaining patterns of features. One set of techniques uses multiple-pass rolling mask lithography to obtain the desired feature pattern. Another technique uses a combination of rolling mask lithography and a self-aligned plasmonic mask lithography to obtain a desired feature pitch.
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