Photolithography mask design simplification

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United States of America Patent

PATENT NO 8881071
SERIAL NO

13977644

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Abstract

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A photolithography mask design is simplified. In one example, a target mask design is optimized for a photolithography mask. Medial axes of the design and assist features on the optimized mask are identified. These are simplified to lines. Lines that are distant from a respective design feature are pruned. The remaining lines are simplified and then thickened to form assist features.

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Patent Owner(s)

  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baidva, Bikram Hillsboro, US 1 0
Dandekar, Omkar S Hillsboro, US 2 4
Erten, Hale Hillsboro, US 2 3
Singh, Vivek K Portland, US 26 184

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