Vertical MOSFET transistor, in particular operating as a selector in nonvolatile memory devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9231103
APP PUB NO 20140239244A1
SERIAL NO

14277150

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Abstract

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A vertical MOSFET transistor is formed in a body of semiconductor material having a surface. The transistor includes a buried conductive region of a first conductivity type; a channel region of a second conductivity type, arranged on top of the buried conductive region; a surface conductive region of the first conductivity type, arranged on top of the channel region and the buried conductive region; a gate insulation region, extending at the sides of and contiguous to the channel region; and a gate region extending at the sides of and contiguous to the gate insulation region.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pellizzer, Fabio Boise, US 313 3154
Pirovano, Agostino Milan, IT 143 1169

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