Semiconductor memory device and method for manufacturing same

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United States of America Patent

PATENT NO 9064902
APP PUB NO 20140239373A1
SERIAL NO

13939351

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Abstract

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According to one embodiment, a semiconductor memory device includes a semiconductor member, a first insulating layer provided on the semiconductor member, a TaN layer provided on the first insulating layer and containing tantalum and nitrogen, a TaSiN layer provided on the TaN layer in contact with the TaN layer and containing tantalum, silicon, and nitrogen, a second insulating layer provided on the TaSiN layer in contact with the TaSiN layer and containing oxygen, and a control electrode provided on the second insulating layer.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsushita, Daisuke Kanagawa-ken, JP 79 712
Murakoshi, Atsushi Kanagawa-ken, JP 51 1011

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