Nonvolatile semiconductor memory device provided with charge storage layer in memory cell
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United States of America Patent
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Sep 22, 2015
Grant Date -
Aug 28, 2014
app pub date -
May 8, 2014
filing date -
Dec 14, 2007
priority date (Note) -
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Abstract
A nonvolatile semiconductor memory device includes a semiconductor portion, a first oxygen-containing portion located on the semiconductor portion, a silicon-containing portion located on the first oxygen-containing portion, a first film located on the silicon-containing portion and including a lamination of a first portion containing silicon and oxygen and a second portion containing silicon and nitrogen, a first high dielectric insulating portion located on the first film and having an oxide-containing yttrium, hafnium or aluminum, a second oxygen-containing portion located on the first high dielectric insulating portion, a second high dielectric insulating portion located on the second oxygen-containing insulating portion and having an oxide-containing yttrium, hafnium or aluminum, a third oxygen-containing portion located on the second high dielectric insulating portion, and a second film located on the third oxygen-containing portion.
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