SEMICONDUCTOR DEVICE HAVING VERTICAL SURROUNDING GATE TRANSISTOR STRUCTURE, METHOD FOR MANUFACTURING THE SAME, AND DATA PROCESSING SYSTEM
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United States of America Patent
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app pub date -
May 8, 2014
filing date -
Sep 27, 2007
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Abandoned
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Abstract
A semiconductor device is provided which includes: semiconductor pillars which include impurity diffused layers, each semiconductor pillar having a width which allows full depletion of a semiconductor forming each semiconductor pillar, the impurity diffused layers being electrically connected to each other; and a common gate section which covers side faces of the pillars.
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