CONTACT RESISTANCE REDUCTION IN FINFETS
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United States of America Patent
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Issued Date -
Aug 28, 2014
app pub date -
Feb 25, 2013
filing date -
Feb 25, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method for forming contacts in a semiconductor device includes forming a plurality of substantially parallel semiconductor fins on a dielectric layer of a substrate having a gate structure formed transversely to a longitudinal axis of the fins. The fins are merged by epitaxially growing a crystalline material between the fins. A field dielectric layer is deposited over the fins and the crystalline material. Trenches that run transversely to the longitudinal axis of the fins are formed to expose the fins in the trenches. An interface layer is formed over portions of the fins exposed in the trenches. Contact lines are formed in the trenches that contact a top surface of the interface layer on the fins and at least a portion of side surfaces of the interface layer on the fins.
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