Semiconductor device and method of forming topside and bottom-side interconnect structures around core die with TSV
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United States of America Patent
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Oct 25, 2016
Grant Date -
Aug 28, 2014
app pub date -
May 1, 2014
filing date -
Dec 11, 2008
priority date (Note) -
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Abstract
A semiconductor device has a core semiconductor device with a through silicon via (TSV). The core semiconductor device includes a plurality of stacked semiconductor die and semiconductor component. An insulating layer is formed around the core semiconductor device. A conductive via is formed through the insulating layer. A first interconnect structure is formed over a first side of the core semiconductor device. The first interconnect structure is electrically connected to the TSV. A second interconnect structure is formed over a second side of the core semiconductor device. The second interconnect structure is electrically connected to the TSV. The first and second interconnect structures include a plurality of conductive layers separated by insulating layers. A semiconductor die is mounted to the first interconnect structure. The semiconductor die is electrically connected to the core semiconductor device through the first and second interconnect structures and TSV.
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