DIELECTRIC-BASED MEMORY CELLS HAVING MULTI-LEVEL ONE-TIME PROGRAMMABLE AND BI-LEVEL REWRITEABLE OPERATING MODES AND METHODS OF FORMING THE SAME
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United States of America Patent
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Issued Date -
Aug 28, 2014
app pub date -
Feb 28, 2013
filing date -
Feb 28, 2013
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Abstract
In some aspects, a memory cell is provided that includes a steering element and a memory element. The memory element includes a first conductive material layer, a first dielectric material layer disposed above the first conductive material layer, a second conductive material layer disposed above the first dielectric material layer, a second dielectric material layer disposed above the second conductive material layer, and a third conductive material layer disposed above the second dielectric material layer. One or both of the first conductive material layer and the second conductive material layer comprise a stack of a metal material layer and a highly doped semiconductor material layer. Numerous other aspects are provided.
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