SEMICONDUCTOR MEMORY

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United States of America Patent

APP PUB NO 20140245101A1
SERIAL NO

13956824

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Abstract

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According to one embodiment, a semiconductor memory includes a memory cell unit, an encoding circuit that generates a first parity and a second parity for data, and a decoding circuit that performs error correction by using the data, the first parity, and the second parity, the first parity is generated by using a first generation polynomial for the data, the second parity is generated by using a second generation polynomial for the input data and the first parity, the second generation polynomial is selected based on the first generation polynomial, the data and the first parity is output to the outside, and the second parity is not output to the outside.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 105-8001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HARA, Tokumasa Kanagawa, JP 112 840
Kosaki, Yasukazu Kanagawa, JP 3 53
Torii, Osamu Tokyo, JP 86 805

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