Importance

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Abstract

In general, according to one embodiment, a semiconductor device includes a first electrode, an oxide semiconductor film, an insulating film, a second electrode, a third electrode. The oxide semiconductor film is configured together with a first region, a second region, a third region, a fourth region, and a fifth region in one direction. The insulating film is provided between the first electrode and the oxide semiconductor film. The second electrode is provided on the second region and contacts the second region with an entire upper face of the second region as a contact face. The third electrode is provided on the fourth region and contacts the fourth region with an entire upper face of the fourth region as a contact face. The oxygen concentrations in the second region and in the fourth region are less than the oxygen concentration in the third region.

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First Claim