INTEGRATED CIRCUIT PROTECTED FROM SHORT CIRCUITS CAUSED BY SILICIDE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Sep 4, 2014
app pub date -
Feb 28, 2014
filing date -
Mar 1, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
An integrated circuit is formed on a semiconductor substrate and includes a trench conductor and a first transistor formed on the surface of the substrate. The transistor includes: a transistor gate structure, a first doped region extending in the substrate between a first edge of the gate structure and an upper edge of the trench conductor, and a first spacer formed on the first edge of the gate structure and above the first doped region. The first spacer completely covers the first doped region and a silicide is present on the trench conductor but is not present on the surface of the first doped region.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully