Methods Of Fabricating Integrated Circuitry
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United States of America Patent
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Mar 1, 2013
filing date -
Mar 1, 2013
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Abstract
A method of fabricating integrated circuitry includes forming a first conductive line. First elemental tungsten is deposited directly against an elevationally outer surface of the first conductive line selectively relative to any exposed non-conductive material. Dielectric material is formed elevationally over the first conductive line and a via is formed there-through to conductive material of the first conductive line at a location where the first tungsten was deposited. Second elemental tungsten is non-selectively deposited to within the via and electrically couples to the first conductive line. A second conductive line is formed elevationally outward of and electrically coupled to the second tungsten that is within the via.
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