Supercritical drying method for semiconductor substrate and supercritical drying apparatus

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9583330
APP PUB NO 20140250714A1
SERIAL NO

14283874

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Abstract

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A supercritical drying method for a semiconductor substrate is disclosed. The method may include introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method may also include performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hayashi, Hidekazu Yokohama, JP 98 616
Iwashita, Mitsuaki Nirasaki, JP 89 1395
Ji, Linan Shanghai, CH 12 208
Mitsuoka, Kazuyuki Nirasaki, JP 22 118
Ohno, Hiroki Nirasaki, JP 61 492
Okuchi, Hisashi Yokohama, JP 62 527
Orii, Takehiko Nirasaki, JP 82 1138
Sato, Yohei Yokohama, JP 94 1208
Tomita, Hiroshi Yokohama, JP 314 3966
Toshima, Takayuki Koshi, JP 89 958
You, Gen Nirasaki, JP 21 467

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