METHODS AND APPARATUS FOR METAL OXIDE REVERSIBLE RESISTANCE-SWITCHING MEMORY DEVICES
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United States of America Patent
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Issued Date -
Sep 11, 2014
app pub date -
Mar 10, 2013
filing date -
Mar 10, 2013
priority date (Note) -
Abandoned
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Abstract
In some aspects, a memory cell is provided that includes a first conducting layer, a reversible resistance switching element above the first conducting layer, a second conducting layer above the reversible resistance switching element, and a liner disposed about a sidewall of the reversible resistance switching element. The reversible resistance switching element includes a first metal oxide material, and the liner includes the first metal oxide material. Numerous other aspects are provided.
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