Extremely thin semiconductor on insulator (ETSOI) logic and memory hybrid chip
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United States of America Patent
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Mar 17, 2015
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app pub date -
Sep 17, 2013
filing date -
Mar 8, 2013
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Abstract
A method of forming a semiconductor device that includes providing a logic device on a semiconductor on insulating layer of a transfer substrate. The transfer substrate may further include a dielectric layer and a first handle substrate. A second handle substrate may be contacted to the semiconductor on insulating layer of the transfer substrate that includes logic device. The first handle substrate may be removed to expose the dielectric layer. A memory device can then be formed on the dielectric layer. Interconnect wiring can then be formed connecting the logic device with the memory device.
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