SACRIFICIAL REPLACEMENT EXTENSION LAYER TO OBTAIN ABRUPT DOPING PROFILE
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United States of America Patent
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app pub date -
Sep 12, 2013
filing date -
Mar 8, 2013
priority date (Note) -
Abandoned
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Abstract
At least one gate structure having a first spacer located on a vertical sidewall thereof is provided on an uppermost surface of a semiconductor substrate. Exposed portions of the semiconductor substrate are then removed utilizing the at least one gate structure and first spacer as an etch mask. A sacrificial replacement material is formed on each recessed surface of the semiconductor substrate. Next, a second spacer is formed contacting the first spacer. Source/drain trenches are then provided by removing exposed portions of the sacrificial replacement material and an underlying portion of the semiconductor substrate. Remaining sacrificial replacement material located beneath the second spacer is removed providing an opening beneath the second spacer. A doped semiconductor material is formed within the source/drain trenches and the opening.
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