Array of mutually isolated, geiger-mode, avalanche photodiodes and manufacturing method thereof
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United States of America Patent
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Dec 8, 2015
Grant Date -
Sep 11, 2014
app pub date -
May 19, 2014
filing date -
Jan 18, 2008
priority date (Note) -
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Abstract
An embodiment of array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type and housing an anode region, of a second conductivity type, facing a top surface of the body, a cathode-contact region, having the first conductivity type and a higher doping level than the body, facing a bottom surface of the body, an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the anode region and the cathode-contact region. The insulation region is formed by a first mirror region of polycrystalline silicon, a second mirror region of metal material, and a channel-stopper region of dielectric material, surrounding the first and second mirror regions.
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