Semiconductor device and method of forming repassivation layer with reduced opening to contact pad of semiconductor die
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United States of America Patent
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Oct 18, 2016
Grant Date -
Sep 11, 2014
app pub date -
May 22, 2014
filing date -
Mar 15, 2010
priority date (Note) -
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Abstract
A semiconductor wafer has a plurality of first semiconductor die. A first conductive layer is formed over an active surface of the die. A first insulating layer is formed over the active surface and first conductive layer. A repassivation layer is formed over the first insulating layer and first conductive layer. A via is formed through the repassivation layer to the first conductive layer. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is mounted to a temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A second insulating layer is formed over the repassivation layer and encapsulant. A second conductive layer is formed over the repassivation layer and first conductive layer. A third insulating layer is formed over the second conductive layer and second insulating layer. An interconnect structure is formed over the second conductive layer.
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