Semiconductor memory device

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United States of America Patent

PATENT NO 8854914
APP PUB NO 20140254275A1
SERIAL NO

13953466

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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According to one embodiment, a memory cell, a word line, and a peripheral circuit are provided. In the memory cell, a ferroelectric film is provided for a gate insulating film. The word line is connected to a control gate electrode of the memory cell. In the peripheral circuit, ferroelectric films are provided for gate insulating films and the peripheral circuit is provided near the memory cell. Here, between the same conductive type transistors of the peripheral circuit, a channel impurity concentration of a transistor to which a driving voltage which drives the word line is applied is different from a channel impurity concentration of a transistor to which a voltage which is lower than the driving voltage is applied.

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First Claim

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shuto, Susumu Kanagawa, JP 49 1541

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