Method of cutting conductive patterns

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United States of America Patent

PATENT NO 9380709
SERIAL NO

13924681

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Abstract

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A method includes patterning a layer over a substrate with a first metal pattern; using a cut mask in a first position relative to the substrate to perform a first cut patterning for removing material from a first region within the first pattern; and using the same cut mask to perform a second cut patterning while in a second position relative to the same layer over the substrate, for removing material from a second region in a second metal pattern of the same layer over the substrate.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Huang-Yu Zhudong Township, TW 62 918
Chen, Wen-Hao Hsin-Chu, TW 112 704
Hsu, Chin-Hsiung Guanyin Township, TW 29 617
Ou, Tsong-Hua Taipei, TW 41 513

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